document number: 94107 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 05-jun-08 1 fast soft recovery rectifier diode, 80 a 80epf..pbf soft recovery series vishay high power products features/description the 80epf..pbf fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop . the glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. this product series has been designed and qualified for industrial level and lead (pb)-free. applications ? output rectification and freewheeling in inverters, choppers and converters ? input rectifications where se vere restrictions on conducted emi should be met product summary v f at 40 a < 1.2 v t rr 90 ns v rrm 1000/1200 v to-247ac 2, 4 anode 1 anode 3 b as e common c a thode available pb-free rohs* compliant major ratings and characteristics symbol test conditions values units v rrm 1000/1200 v i f(av) sinusoidal waveform 80 a i fsm 1100 t rr 1 a, - 100 a/s 90 ns v f 40 a, t j = 25 c 1.2 v t j - 40 to 150 c voltage ratings part number v rrm , maximum peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm at 150 c ma 80EPF10PBF 1000 1100 12 80epf12pbf 1200 1 3 00 absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) t c = 92 c, 180 conduction half sine wave 80 a maximum peak one cycle non-repetitive surge current i fsm 10 ms sine pulse, rated v rrm applied 1100 10 ms sine pulse, no voltage reapplied 1250 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 5000 a 2 s 10 ms sine pulse, no voltage reapplied 7000 maximum i 2 t for fusing i 2 t t = 0.1 to 10 ms, no voltage reapplied 70 000 a 2 s * pb containing terminations are not rohs compliant, exemptions may apply
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94107 2 revision: 05-jun-08 80epf..pbf soft recovery series vishay high power products fast soft recovery rectifier diode, 80 a electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm 80 a, t j = 25 c 1. 3 5v forward slope resistance r t t j = 150 c 4.0 3 m threshold voltage v f(to) 0.87 v maximum reverse leakage current i rm t j = 25 c v r = rated v rrm 0.1 ma t j = 150 c 12 recovery characteristics parameter symbol test conditions values units reverse recovery time t rr i f at 80 apk 25 a/s 25 c 480 ns reverse recovery current i rr 7.1 a reverse recovery charge q rr 2.1 c snap factor s 0.5 i fm t rr dir dt i rm(rec) q rr t thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 40 to 150 c maximum thermal resistance, junction to case r thjc dc operation 0. 3 5 c/w maximum thermal resistance, junction to ambient r thja 40 typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased 0.2 approximate weight 6g 0.21 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case st yle to-247ac (jedec) 80epf10 80epf12
document number: 94107 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 05-jun-08 3 80epf..pbf soft recovery series fast soft recovery rectifier diode, 80 a vishay high power products fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current 0 30 maximum allowable case temperature (c) average forward current (a) 20 10 40 50 60 70 80 90 90 80 100 110 120 130 140 150 80epf.. series r thjc (dc) = 0.35 c/w conduction angle 60 30 90 180 120 ? 0 maximum allowable case temperature (c) average forward current (a) 20 40 60 80 100 120 140 90 80 100 110 120 130 140 150 dc 30 60 90 120 180 80epf.. series r thjc (dc) = 0.35 c/w ? conduction period maximum average forward power loss (w) average forward current (a) 0 20 40 60 80 100 120 140 0 25 50 75 100 125 150 175 200 rms limit dc 180 120 90 60 30 ? conduction period 80epf.. series t j = 150 c maximum average forward power loss (w) average forward current (a) 0 20 30 50 70 90 10 40 60 80 0 20 40 60 80 100 120 140 180 120 90 60 30 rms limit 80epf.. series t j = 150 c conduction angle ? 1 10 100 peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 300 400 500 600 700 800 900 1000 1100 1200 initial t j = 150 c at 60 hz 0.0083 s at 50 hz 0.0100 s at any rated load condition and with rated v rrm applied following surge. 80epf.. series 0.01 0.1 1 peak half sine wave forward current (a) pulse train duration (s) 300 400 500 600 700 800 900 1000 1100 1200 1300 initial t j = 150 c no voltage reapplied rated v rrm reapplied maximum non-repetitive surge current versus pulse train duration. 80epf.. series
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94107 4 revision: 05-jun-08 80epf..pbf soft recovery series vishay high power products fast soft recovery rectifier diode, 80 a fig. 7 - forward voltage drop characteristics fig. 8 - recovery time characteristics, t j = 25 c fig. 9 - recovery time characteristics, t j = 150 c fig. 10 - recovery charge characteristics, t j = 25 c fig. 11 - recovery char ge characteristics, t j = 150 c 1000 10 100 1 0.5 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 instantaneous forward current (a) instantaneous forward voltage (v) t j = 25 c t j = 150 c 80epf.. series 0 40 80 120 160 200 t rr - maximum reverse recovery time (ns) di/dt - rate of fall of forward current (a/s) 0 100 200 300 400 500 600 700 800 80epf.. series t j = 25 c i fm = 80 a i fm = 20 a i fm = 10 a i fm = 1 a i fm = 40 a 0 40 80 120 160 200 t rr - maximum reverse recovery time (ns) di/dt - rate of fall of forward current (a/s) 0 200 400 600 800 1000 1200 1400 1600 1800 80epf.. series t j = 150 c i fm = 80 a i fm = 40 a i fm = 20 a i fm = 10 a i fm = 1 a 0 40 80 120 160 200 q rr - maximum reverse recovery charge (nc) di/dt - rate of fall of forward current (a/s) 0 2000 4000 6000 8000 10 000 12 000 80epf.. series t j = 25 c i fm = 80 a i fm = 1 a i fm = 40 a i fm = 20 a i fm = 10 a 0 40 80 120 160 200 q rr - maximum reverse recovery charge (nc) di/dt - rate of fall of forward current (a/s) 0 5000 10 000 15 000 20 000 25 000 80epf.. series t j = 150 c i fm = 80 a i fm = 1 a i fm = 40 a i fm = 10 a i fm = 20 a
document number: 94107 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 05-jun-08 5 80epf..pbf soft recovery series fast soft recovery rectifier diode, 80 a vishay high power products fig. 12 - recovery current characteristics, t j = 25 c fig. 1 3 - recovery current characteristics, t j = 150 c fig. 14 - thermal impedance z thjc characteristics 0 40 80 120 160 200 i rr - maximum reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 0 5 10 15 20 25 30 35 40 45 80epf.. series t j = 25 c i fm = 80 a i fm = 1 a i fm = 40 a i fm = 20 a i fm = 10 a 0 40 80 120 160 200 i rr - maximum reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 0 10 20 30 40 50 60 80epf.. series t j = 150 c i fm = 80 a i fm = 1 a i fm = 40 a i fm = 20 a i fm = 10 a 10 0.0001 0.001 0.01 0.1 1 square wave pulse duration (s) z thjc - transient thermal impedance (c/w) 0.001 0.01 0.1 1 d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 steady state value (dc operation) 80epf.. series single pulse
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94107 6 revision: 05-jun-08 80epf..pbf soft recovery series vishay high power products fast soft recovery rectifier diode, 80 a ordering information table links to related documents dimensions http://www.vishay.com/doc?9522 3 part marking information http://www.vishay.com/doc?95226 1 - current rating (80 = 80 a) 2 - circuit configuration: e = single diode 3 - package: p = to-247ac 4 - type of silicon: f = fast diode 5 - voltage code x 100 = v rrm 6 - none = standard production pbf = lead (pb)-free 10 = 1000 v 12 = 1200 v device code 5 13 24 6 80 e p f 12 pbf
outline dimensions www.vishay.com vishay semiconductors revision: 16-jun-11 1 document number: 95223 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters and inches notes (1) dimensioning and tolera ncing per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish uncontrolled in l1 (6) ? p to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jede c outline to-247 with ex ception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 fk 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 1.78 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc 0.10 a c m m e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c ? k b d m m a (6) ? p (datum b) fp1 d1 (4) 4 e1 0.01 b d m m view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting lead assignments diodes 1. - anode/open 2. - cathode 3. - anode
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